Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation
Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation
We have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1x1015/cm2 after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1±0.4 dB/cm and 1.2±0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications.
659-661
Teo, E.J.
4a4ebf02-61df-4c49-98ac-a2236e622b6f
Bettiol, A.A.
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Yang, P.
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Breese, M.B.H.
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Xiong, B.Q.
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Mashanovich, G.Z.
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Headley, W.R.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
2009
Teo, E.J.
4a4ebf02-61df-4c49-98ac-a2236e622b6f
Bettiol, A.A.
9e83d3b0-73b9-4ec9-ac19-b0c217017c02
Yang, P.
301392e6-20ae-4b0a-97fb-0139c119151e
Breese, M.B.H.
6ddfddc2-98b2-4408-a3e2-e39586d50548
Xiong, B.Q.
7de45acf-6551-4324-9bac-34e06869f78e
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Headley, W.R.
5a80c998-1fc3-4ad0-a82a-3870250efbd8
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Teo, E.J., Bettiol, A.A., Yang, P., Breese, M.B.H., Xiong, B.Q., Mashanovich, G.Z., Headley, W.R. and Reed, G.T.
(2009)
Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation.
Optics Letters, 34 (5), .
(doi:10.1364/OL.34.000659).
Abstract
We have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1x1015/cm2 after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1±0.4 dB/cm and 1.2±0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications.
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Published date: 2009
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
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Local EPrints ID: 356467
URI: http://eprints.soton.ac.uk/id/eprint/356467
ISSN: 0146-9592
PURE UUID: 6cf46f48-a229-47b9-8bc2-7bf7ce881460
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Date deposited: 16 Sep 2013 11:39
Last modified: 14 Mar 2024 14:49
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Contributors
Author:
E.J. Teo
Author:
A.A. Bettiol
Author:
P. Yang
Author:
M.B.H. Breese
Author:
B.Q. Xiong
Author:
W.R. Headley
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