Publication No: 316P

Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide

D.C.Hanna, A.C.Large, D.P.Shepherd, and A.C.Tropper
Department of Physics and Optoelectronics Research Centre, University of Southampton, UK

I.Chartier, B.Ferrand, and D.Pelenc
Laboratoire d'Electronique, de Technologie et d'Instrumentation, (Commissariat l'Energie Atomique - Technologies Avancees) Departement Optronique - Centre d'Etudes Nucleaires de Grenoble 85X - 38041 Grenoble Cedex, France

Abstract

We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.

Applied Physics Letters (1993) Vol.63 pp.7-9

doi: 10.1063/1.109703

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