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An electrically driven mid-infrared solid state modulator

Harvey N.Rutt, Suresh Uppal, Chong Yew Lee


Detailed device fabrication and operation modelling has been undertaken for a mid-infrared, 8-14μm band modulator based on a high purity Germanium p-i-n diode. The results show the crucial importance of optimising material properties and dopant concentrations and profiles for optimum device performance.

IRMMW-THz 2005 [The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on TeraHertz Electronics] Williamsburg, Virginia 19-23 Sep (2005)

doi: 10.1109/ICIMW.2005.1572518

Southampton ePrint id: 38293


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Copyright University of Southampton 2006