An electrically driven mid-infrared solid state modulator

Abstract

Detailed device fabrication and operation modelling has been undertaken for a mid-infrared, 8-14μm band modulator based on a high purity Germanium p-i-n diode. The results show the crucial importance of optimising material properties and dopant concentrations and profiles for optimum device performance.

The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on TeraHertz Electronics (IRMMW-THz 2005) Williamsburg, Virginia 19-23 Sep (2005)

doi: 10.1109/ICIMW.2005.1572518

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