Laser operation of a low loss (0.1 dB/cm) Nd:Gd3Ga5O12 thick film (40 microns) waveguide grown by pulsed laser deposition
Laser operation of a low loss (0.1 dB/cm) Nd:Gd3Ga5O12 thick film (40 microns) waveguide grown by pulsed laser deposition
Pulsed laser deposition of epitaxial, single crystal Nd:Gd (YAG) substrates with thickness up to 135 µm and propagation losses as low as 0.1 dB/cm is reported. Rutherford Backscattering Spectrometry (RBS) has shown constant stoichiometry for the films throughout their depth.
A laser threshold of 18 mW of absorbed pump power has been obtained and lasing action has been observed at 1060.6 nm for pump powers close to the lasing threshold, and at both 1059.0 and 1060.6 nm at pump power levels of approximately 1.5 times above threshold. A slope efficiency of 17.5% was derived using an output couplers with a transmission of 4.5%.
The combination of low propagation losses and high numerical aperture (0.75) for the waveguides indicates the potential of the fabrication technique to produce high quality thick multi-layer waveguides. Such designs are suitable for the development of high-power diode-pumped laser sources of near-diffraction-limited beam quality.
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
May-Smith, T.C.
47952bbd-ce28-4507-a723-b4d80bf0f809
Shepherd, D.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
2003
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
May-Smith, T.C.
47952bbd-ce28-4507-a723-b4d80bf0f809
Shepherd, D.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Grivas, C., May-Smith, T.C., Shepherd, D. and Eason, R.W.
(2003)
Laser operation of a low loss (0.1 dB/cm) Nd:Gd3Ga5O12 thick film (40 microns) waveguide grown by pulsed laser deposition.
COLA '03, Crete, Heraklion, Greece.
05 - 10 Oct 2003.
1 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Pulsed laser deposition of epitaxial, single crystal Nd:Gd (YAG) substrates with thickness up to 135 µm and propagation losses as low as 0.1 dB/cm is reported. Rutherford Backscattering Spectrometry (RBS) has shown constant stoichiometry for the films throughout their depth.
A laser threshold of 18 mW of absorbed pump power has been obtained and lasing action has been observed at 1060.6 nm for pump powers close to the lasing threshold, and at both 1059.0 and 1060.6 nm at pump power levels of approximately 1.5 times above threshold. A slope efficiency of 17.5% was derived using an output couplers with a transmission of 4.5%.
The combination of low propagation losses and high numerical aperture (0.75) for the waveguides indicates the potential of the fabrication technique to produce high quality thick multi-layer waveguides. Such designs are suitable for the development of high-power diode-pumped laser sources of near-diffraction-limited beam quality.
More information
Published date: 2003
Venue - Dates:
COLA '03, Crete, Heraklion, Greece, 2003-10-05 - 2003-10-10
Identifiers
Local EPrints ID: 41594
URI: http://eprints.soton.ac.uk/id/eprint/41594
PURE UUID: 4553a0f6-3fe0-4c5c-8808-f02c98251be1
Catalogue record
Date deposited: 05 Oct 2006
Last modified: 16 Mar 2024 02:39
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Contributors
Author:
C. Grivas
Author:
T.C. May-Smith
Author:
D. Shepherd
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