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Low threshold ion-implanted Nd:YAG channel waveguide laser
S.J.Field, D.C.Hanna, A.C.Large, D.P.Shepherd, A.C.Tropper,
Department of Physics and Optoelectronics Research Centre, University of Southampton, UK
P.J.Chandler, P.D.Townsend, L.Zhang
School of Mathematical and Physical Sciences, University of Sussex, Brighton BN1 9QH UK
Abstract
The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500μW in good agreement with theoretical expectation. Output slope efficiencies of ~29% have also been demonstrated.
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Electronics Letters (1991) Vol.27(25) pp.2375-2376
doi: 10.1049/el:19911470
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Copyright University of Southampton 2006