The University of Southampton

Publications

Michalas, Loukas, Trapatseli, Maria, Stathopoulos, Spyridon, Cortese, Simone, Khiat, Ali and Prodromakis, Themistoklis (2018) Dataset for article "Interface asymmetry induced by symmetric electrodes on Metal-Al:TiOx-Metal structures". University of Southampton doi:10.5258/SOTON/D0307 [Dataset]

Stathopoulos, Spyridon, Khiat, Ali, Trapatseli, Maria, Cortese, Simone, Serb, Alexantrou, Valov, Ilia and Prodromakis, Themistoklis (2018) Multibit memory operation of metal-oxide bi-layer memristors. University of Southampton doi:10.5258/SOTON/D0329 [Dataset]

Stathopoulos, Spyros, Khiat, Ali, Trapatseli, Maria, Cortese, Simone, Serb, Alexantrou, Valov, Ilia and Prodromakis, Themistoklis (2017) Multibit memory operation of metal-oxide bi-layer memristors. Scientific Reports, 7. (doi:10.1038/s41598-017-17785-1).

Michalas, Loukas, Trapatseli, Maria, Stathopoulos, Spyros, Cortese, Simone, Khiat, Ali and Prodromakis, Themistoklis (2017) Interface asymmetry induced by symmetric electrodes on metal-Al:TiOx-metal structures. IEEE Transactions on Nanotechnology. (doi:10.1109/TNANO.2017.2777698).

Papandroulidakis, Georgios, Khiat, Ali, Serb, Alexantrou, Stathopoulos, Spyros, Michalas, Loukas and Prodromakis, Themistoklis (2018) Metal oxide-enabled reconfigurable memristive threshold logic gates. In 2018 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE. 5 pp . (doi:10.1109/ISCAS.2018.8351192).

Stathopoulos, Spyros, Khiat, Ali, Serb, Alexantrou and Prodromakis, Themistoklis (2018) Live Demonstration: Benchmarking analogue performance of emerging random access memory technologies. IEEE International Symposium on Circuits and Systems, Florence, Italy. 27 - 30 May 2018. (doi:10.1109/ISCAS.2018.8351439).

Stathopoulos, Spyros, Khiat, Ali, Serb, Alexantrou and Prodromakis, Themistoklis (2018) Benchmarking analogue performance of emerging random access memory technologies. IEEE International Symposium on Circuits and Systems, Florence, Italy. 27 - 30 May 2018. (doi:10.1109/ISCAS.2018.8351793).

Abbey, Thomas, Serb, Alexantrou, Vasilakis, Nikolaos, Michalas, Loukas, Khiat, Ali, Stathopoulos, Spyros and Prodromakis, Themis (2018) An embedded environmental control micro-chamber system for RRAM memristor characterisation. IEEE International Symposium on Circuits and Systems, Florence, Italy. 27 - 30 May 2018. pp. 1-4 . (doi:10.1109/ISCAS.2018.8351673).

Papandroulidakis, Georgios, Serb, Alexantrou, Khiat, Ali, Stathopoulos, Spyros, Michalas, Loukas and Prodromakis, Themistoklis (2018) Design and practical implementation of memristor-based threshold logic gates. International Conference on Memristive Materials, Devices & Systems<br/>, Beijing, China. 03 - 06 Jul 2018. (In Press)

Michalas, Loukas, Stathopoulos, Spyros, Khiat, Ali and Prodromakis, Themis (2018) Conduction mechanisms in Pt/TiO2/Pt memristors. International Conference on Memristive Materials, Devices & Systems<br/>, Beijing, China. 03 - 06 Jul 2018. (In Press)

Michalas, Loukas, Khiat, Ali, Stathopoulos, Spyros and Prodromakis, Themis (2018) Interface barriers at Metal – TiO2 contacts. International Conference on Memristive Materials, Devices & Systems<br/>, Beijing, China. 03 - 06 Jul 2018. (In Press)

Stathopoulos, Spyros, Michalas, Loukas, Khiat, Ali, Serb, Alexantrou and Prodromakis, Themistoklis (2018) A comprehensive technology agnostic RRAM characterisation protocol. International Conference on Memristive Materials, Devices & Systems<br/>, Beijing, China. 03 - 06 Jul 2018.

Michalas, Loukas (2018) Dataset for article "Electrical characteristics of interfacial barriers at Metal – TiO2 contacts". University of Southampton doi:10.5258/SOTON/D0630 [Dataset]

Michalas, Loukas, Khiat, Ali, Stathopoulos, Spyros and Prodromakis, Themis (2018) Electrical characteristics of interfacial barriers at Metal – TiO2 contacts. Journal of Physics D: Applied Physics, 51 (42), 1-13. (doi:10.1088/1361-6463/aadbd2).

Michalas, Loukas (2019) Dataset for article "Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristrors". University of Southampton doi:10.5258/SOTON/D0657 [Dataset]

Michalas, Loukas, Stathopoulos, Spyros, Khiat, Ali and Prodromakis, Themis (2018) Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors. Applied Physics Letters, 113 (14), 1-4. (doi:10.1063/1.5040936).

Abbey, T., Serb, A., Vasilakis, N., Michalas, L., Khiat, A., Stathopoulos, S. and Prodromakis, T. (2018) Live Demonstration: An embedded environmental control micro-chamber system for RRAM memristor characterisation. In 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings. vol. 2018-May, Institute of Electrical and Electronics Engineers Inc.. (doi:10.1109/ISCAS.2018.8351845).

Michalas, Loukas, Niang, Kham, Khiat, Ali, Stathopoulos, Spyros, Flewitt, Andrew and Prodromakis, Themis (2019) Two-terminal metal-IGZO-metal devices. Innovations in Large-Area Electronics Conference (InnoLAE) 2019, Cambridge, United Kingdom. 22 - 23 Jan 2019.

Messaris, Ioannis, Nikolaidis, Spyridon, Serb, Alexantrou, Stathopoulos, Spyros, Gupta, Isha, Khiat, Ali and Prodromakis, Themistoklis (2017) Live demonstration: A TiO2 ReRAM parameter extraction method. In 2017 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE.. (doi:10.1109/ISCAS.2017.8050398).

Stathopoulos, Spyridon and Serb, Alexantrou (2019) Dataset for article "A Memristive Switching Uncertainty Model". University of Southampton doi:10.5258/SOTON/D0929 [Dataset]

Michalas, Loukas (2019) Data for 'An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks'. University of Southampton doi:10.5258/SOTON/D0930 [Dataset]

Stathopoulos, Spyros, Serb, Alexantrou, Khiat, Ali, Ogorzałek, Maciej and Prodromakis, Themis (2019) A memristive switching uncertainty model. IEEE Transactions on Electron Devices, 66 (7). (doi:10.1109/TED.2019.2918102). (In Press)

Michalas, Loukas, Stathopoulos, Spyros, Khiat, Ali and Prodromakis, Themis (2019) An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks. Scientific Reports, 9. (doi:10.1038/s41598-019-44607-3).

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