Hot-wire chemical vapour deposition for silicon nitride waveguides
Hot-wire chemical vapour deposition for silicon nitride waveguides
In this work, we demonstrate the use of HWCVD as an alternative technique to grow SiN layers for photonic waveguides at temperatures <400ºC. In particular, the effect of the ammonia flow and the filament temperature on the material structure, optical properties and propagation losses of the deposited films was investigated. SiN layers with good thickness uniformity, roughness as low as 0.61nm and H concentration as low as 10.4×1021 atoms/cm3 were obtained. Waveguides fabricated on the studied materials exhibited losses as low as 7.1 and 12.3 dB/cm at 1310 and 1550nm respectively.
269-272
Domínguez Bucio, Thalía
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Tarazona, Antulio
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Khokhar, Ali Z.
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Mashanovich, Goran Z.
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Gardes, Frederic Y.
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Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Khokhar, Ali Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Domínguez Bucio, Thalía, Tarazona, Antulio, Khokhar, Ali Z., Mashanovich, Goran Z. and Gardes, Frederic Y.
(2016)
Hot-wire chemical vapour deposition for silicon nitride waveguides.
[in special issue: 229th ECS Meeting]
ECS Transactions, 72 (4), .
(doi:10.1149/07204.0269ecst).
Abstract
In this work, we demonstrate the use of HWCVD as an alternative technique to grow SiN layers for photonic waveguides at temperatures <400ºC. In particular, the effect of the ammonia flow and the filament temperature on the material structure, optical properties and propagation losses of the deposited films was investigated. SiN layers with good thickness uniformity, roughness as low as 0.61nm and H concentration as low as 10.4×1021 atoms/cm3 were obtained. Waveguides fabricated on the studied materials exhibited losses as low as 7.1 and 12.3 dB/cm at 1310 and 1550nm respectively.
Text
Paper - ECS Meeting 2016 V3.pdf
- Accepted Manuscript
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Accepted/In Press date: 10 May 2016
e-pub ahead of print date: 19 May 2016
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 400415
URI: http://eprints.soton.ac.uk/id/eprint/400415
ISSN: 1938-5862
PURE UUID: 372450c5-fc99-454e-93ee-808fb6a17a4b
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Date deposited: 16 Sep 2016 09:11
Last modified: 15 Mar 2024 04:02
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Author:
Antulio Tarazona
Author:
Ali Z. Khokhar
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