The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
TiN/HfOx/TiN resistive RAM (RRAM) devices have been fabricated where the hafnium oxide layer has been deposited at three different temperatures via atomic layer deposition (ALD). Material characterization shows the structure of the hafnium oxide is converted from cubic to monoclinic for 400 degrees C. Elemental analysis shows that the temperature affects the stoichiometric behavior of hafnium oxide, with a higher oxygen concentration at 350 degrees C and above. The switching behavior differs significantly for each device whereby the 400 degrees C device shows no successful switching, due to the change in structure to monoclinic. The two lower temperatures both show successful bipolar switching which set at negative voltages. The 300 degrees C device has a higher Roff/Ron of 13.9, with superior endurance. The 350 degrees C device has a lower Roff/Ron of 5.5 and shows deterioration in switching properties as the number of cycles are increased. At 300 degrees C, the oxygen hafnium ratio is at a minimum; hence the greatest amount of oxygen vacancies are present, which results in improved switching characteristics. This supports the theory that oxygen vacancies play a key role in the switching mechanism for metal oxide RRAM devices.
Morgan, Katrina
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de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
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Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Morgan, Katrina, de Groot, Kees and Huang, Ruomeng
(2014)
The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices.
IEEE International Symposium on Circuits and Systems (ISCAS), , Melbourne, Australia.
01 - 05 Jun 2014.
(doi:10.1109/ISCAS.2014.6865158).
Record type:
Conference or Workshop Item
(Paper)
Abstract
TiN/HfOx/TiN resistive RAM (RRAM) devices have been fabricated where the hafnium oxide layer has been deposited at three different temperatures via atomic layer deposition (ALD). Material characterization shows the structure of the hafnium oxide is converted from cubic to monoclinic for 400 degrees C. Elemental analysis shows that the temperature affects the stoichiometric behavior of hafnium oxide, with a higher oxygen concentration at 350 degrees C and above. The switching behavior differs significantly for each device whereby the 400 degrees C device shows no successful switching, due to the change in structure to monoclinic. The two lower temperatures both show successful bipolar switching which set at negative voltages. The 300 degrees C device has a higher Roff/Ron of 13.9, with superior endurance. The 350 degrees C device has a lower Roff/Ron of 5.5 and shows deterioration in switching properties as the number of cycles are increased. At 300 degrees C, the oxygen hafnium ratio is at a minimum; hence the greatest amount of oxygen vacancies are present, which results in improved switching characteristics. This supports the theory that oxygen vacancies play a key role in the switching mechanism for metal oxide RRAM devices.
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e-pub ahead of print date: 1 June 2014
Venue - Dates:
IEEE International Symposium on Circuits and Systems (ISCAS), , Melbourne, Australia, 2014-06-01 - 2014-06-05
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
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Local EPrints ID: 396490
URI: http://eprints.soton.ac.uk/id/eprint/396490
PURE UUID: 207d3235-30b7-4ed2-9dc0-bc4adc6316f6
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Date deposited: 08 Jun 2016 17:34
Last modified: 15 Mar 2024 03:42
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Author:
Katrina Morgan
Author:
Ruomeng Huang
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