Mashanovich, G.Z., Nedeljković, M., Soler Penadés, J., Mitchell, C.J., Khokhar, A.Z., Littlejohns, C.J., Stanković, S., Troia, B., Wang, Y., Reynolds, Scott, Passaro, V.M.N., Shen, Li, Healy, N., Peacock, A.C., Alonso-Ramos, C., Ortega-Moñux, A., Wangüemert-Pérez, G., Molina-Fernández, Íñigo, Rowe, D.J., Wilkinson, J.S., Cheben, P., Ackert, J.J., Knights, A.P., Thomson, D.J. and Gardes, F.Y. (2015) Group IV mid-infrared photonics. SPIE Conference on Silicon Photonics X, San Francisco, United States. 09 - 12 Feb 2015. (doi:10.1117/12.2176219).
Abstract
In this paper we present SOI, suspended Si, and Ge-on-Si photonic platforms and devices for the mid-infrared. We demonstrate low loss strip and slot waveguides in SOI and show efficient strip-slot couplers. A Vernier configuration based on racetrack resonators in SOI has been also investigated. Mid-infrared detection using defect engineered silicon waveguides is reported at the wavelength of 2-2.5 µm. In order to extend transparency of Si waveguides, the bottom oxide cladding needs to be removed. We report a novel suspended Si design based on subwavelength structures that is more robust than previously reported suspended designs. We have fabricated record low loss Ge-on-Si waveguides, as well as several other passive devices in this platform. All optical modulation in Ge is also analyzed.
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