Next generation device grade silicon-germanium on insulator
Next generation device grade silicon-germanium on insulator
High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.
Littlejohns, Callum
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Nedeljković, Miloš
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Mallinson, Christopher F.
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Watts, John F.
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Mashanovich, Goran Z.
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Reed, Graham T.
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Gardes, Frederic Y.
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6 February 2015
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Mallinson, Christopher F.
f2372d62-5bbd-445b-b40e-4a62db5d9f2f
Watts, John F.
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Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, Callum, Nedeljković, Miloš, Mallinson, Christopher F., Watts, John F., Mashanovich, Goran Z., Reed, Graham T. and Gardes, Frederic Y.
(2015)
Next generation device grade silicon-germanium on insulator.
Scientific Reports, 5, [8288].
(doi:10.1038/srep08288).
Abstract
High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.
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Next Generation Device Grade Silicon-Germanium On Insulator.pdf
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More information
Accepted/In Press date: 12 January 2015
Published date: 6 February 2015
Organisations:
Optoelectronics Research Centre, Photonic Systems Circuits & Sensors
Identifiers
Local EPrints ID: 375138
URI: http://eprints.soton.ac.uk/id/eprint/375138
PURE UUID: c54a814a-19fc-433e-9535-99579db63101
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Date deposited: 13 Mar 2015 15:09
Last modified: 15 Mar 2024 03:49
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Contributors
Author:
Christopher F. Mallinson
Author:
John F. Watts
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