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Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator

Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator
Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator
In this paper we focus on developing an efficient method to obtain a crystalline SiGe layer on top of an insulator. The method is aimed at enabling the fabrication of different concentration of crystalline SiGe alloy through structure engineering. This technique could enable the alloy composition to be different by design across a single wafer by using a single Germanium deposition step.
1938-5862
155-157
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139

Littlejohns, Callum, Gardes, Frederic Y., Nedeljković, Miloš, Mashanovich, Goran Z. and Reed, Graham T. (2014) Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator. ECS Transactions, 64 (6), 155-157. (doi:10.1149/06406.0155ecst).

Record type: Article

Abstract

In this paper we focus on developing an efficient method to obtain a crystalline SiGe layer on top of an insulator. The method is aimed at enabling the fabrication of different concentration of crystalline SiGe alloy through structure engineering. This technique could enable the alloy composition to be different by design across a single wafer by using a single Germanium deposition step.

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Published date: 12 August 2014
Organisations: Optoelectronics Research Centre, Photonic Systems Circuits & Sensors
Learn more about Optoelectronics Research Centre research

Identifiers

Local EPrints ID: 375140
URI: http://eprints.soton.ac.uk/id/eprint/375140
DOI: doi:10.1149/06406.0155ecst
ISSN: 1938-5862
PURE UUID: fdf42837-7346-4e50-9590-914de50b8c9d
ORCID for Frederic Y. Gardes: ORCID iD orcid.org/0000-0003-1400-3272
ORCID for Miloš Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

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Date deposited: 13 Mar 2015 15:16
Last modified: 15 Mar 2024 03:49

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Contributors

Author: Callum Littlejohns
Author: Frederic Y. Gardes ORCID iD
Author: Miloš Nedeljković ORCID iD
Author: Goran Z. Mashanovich
Author: Graham T. Reed

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