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Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

Pier J.A.Sazioa, Justin R.Sparksb, Rongrui Heb, Mahesh Krishnamurthib, Thomas C.Fitzgibbonsb, Subhasis Chaudhurib, Neil F.Barilb, Anna C.Peacocka, Noel Healya, Venkatraman Gopalanb, John V.Baddingb

a. Optoelectronics Research Centre, University of Southampton, UK
b. Dept. of Chemistry and Materials Research Institute, Pennsylvania State University, State College, PA 16802, USA


ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2-5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode core-cladding waveguiding.

SPIE Photonics West San Francisco 7-12 Feb (2015)

Southampton ePrint id: 375129


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