Mid-infrared thermo-optic modulators in SoI
Mid-infrared thermo-optic modulators in SoI
We report experimental results for thermo-optic modulators in silicon-on-insulator (SoI) material operating at the wavelength of 3.8 µm. These devices are based on asymmetric Mach-Zehnder interferometers (MZIs) with aluminum heaters placed above one MZI arm. The SoI rib waveguides with 400-nm Si device layer thickness are used. Devices with conventional straight MZI arm and spiral MZI arm geometries are investigated. Straight-arm MZIs exhibited higher modulation depths, of up to 30.5 dB, whereas spiral-arm MZIs required smaller switching powers, as low as 47 mW. Measured -3 dB bandwidths were up to 23.8 kHz and did not vary significantly with device configuration.
1352-1355
Nedeljković, Miloš
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Stanković, Stevan
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Mitchell, Colin J.
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Khokhar, Ali Z.
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Reynolds, Scott
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Thomson, David J.
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Gardes, Frederic Y.
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Littlejohns, Callum
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Reed, Graham T.
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Mashanovich, Goran Z.
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1 July 2014
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Stanković, Stevan
13e8c464-b876-405a-b442-7c437a6eafd3
Mitchell, Colin J.
0e48c936-a405-434d-818a-d83e382aa826
Khokhar, Ali Z.
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Reynolds, Scott
79120bae-f620-433a-9360-71973dbc4222
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Nedeljković, Miloš, Stanković, Stevan, Mitchell, Colin J., Khokhar, Ali Z., Reynolds, Scott, Thomson, David J., Gardes, Frederic Y., Littlejohns, Callum, Reed, Graham T. and Mashanovich, Goran Z.
(2014)
Mid-infrared thermo-optic modulators in SoI.
IEEE Photonics Technology Letters, 26 (13), .
(doi:10.1109/LPT.2014.2323702).
Abstract
We report experimental results for thermo-optic modulators in silicon-on-insulator (SoI) material operating at the wavelength of 3.8 µm. These devices are based on asymmetric Mach-Zehnder interferometers (MZIs) with aluminum heaters placed above one MZI arm. The SoI rib waveguides with 400-nm Si device layer thickness are used. Devices with conventional straight MZI arm and spiral MZI arm geometries are investigated. Straight-arm MZIs exhibited higher modulation depths, of up to 30.5 dB, whereas spiral-arm MZIs required smaller switching powers, as low as 47 mW. Measured -3 dB bandwidths were up to 23.8 kHz and did not vary significantly with device configuration.
Text
Thermal MZI PTL Jan2013 vFINAL - MN.pdf
- Accepted Manuscript
More information
e-pub ahead of print date: 14 May 2014
Published date: 1 July 2014
Organisations:
Optoelectronics Research Centre, Physics & Astronomy, Electronics & Computer Science, Photonic Systems Circuits & Sensors
Identifiers
Local EPrints ID: 367560
URI: http://eprints.soton.ac.uk/id/eprint/367560
ISSN: 1041-1135
PURE UUID: 4f64a8cd-7fb7-4274-8342-2b91e31b7a07
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Date deposited: 01 Aug 2014 11:17
Last modified: 15 Mar 2024 03:49
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Contributors
Author:
Stevan Stanković
Author:
Ali Z. Khokhar
Author:
Scott Reynolds
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