Free carrier lifetime modification for silicon waveguide based devices
Free carrier lifetime modification for silicon waveguide based devices
We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers.
19779-19784
Wright, N.M.
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Thomson, D.J.
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Litvinenko, K.L.
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Headley, W.R.
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Smith, A.J.
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Knights, A.P.
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Deane, J.H.B.
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Gardes, F.Y.
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Mashanovich, G.Z.
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Gwilliam, R.
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Reed, G.T.
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24 November 2008
Wright, N.M.
df44aecb-6c0d-4090-af8d-cb8518bb081e
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Litvinenko, K.L.
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Headley, W.R.
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Smith, A.J.
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Knights, A.P.
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Deane, J.H.B.
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Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Mashanovich, G.Z.
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Gwilliam, R.
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Reed, G.T.
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Wright, N.M., Thomson, D.J., Litvinenko, K.L., Headley, W.R., Smith, A.J., Knights, A.P., Deane, J.H.B., Gardes, F.Y., Mashanovich, G.Z., Gwilliam, R. and Reed, G.T.
(2008)
Free carrier lifetime modification for silicon waveguide based devices.
Optics Express, 16 (24), .
(doi:10.1364/OE.16.019779).
Abstract
We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers.
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oe-16-24-19779
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Published date: 24 November 2008
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Photonic Systems Circuits & Sensors
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Local EPrints ID: 356477
URI: http://eprints.soton.ac.uk/id/eprint/356477
ISSN: 1094-4087
PURE UUID: 2d025ffa-e6cc-4d68-bfe4-e5c9c3cf55ce
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Date deposited: 16 Sep 2013 13:52
Last modified: 15 Mar 2024 03:40
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Author:
N.M. Wright
Author:
K.L. Litvinenko
Author:
W.R. Headley
Author:
A.J. Smith
Author:
A.P. Knights
Author:
J.H.B. Deane
Author:
R. Gwilliam
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