Low-loss Ti:sapphire waveguides fabricated by pulsed laser deposition
Low-loss Ti:sapphire waveguides fabricated by pulsed laser deposition
We report the fabrication and characterisation of Ti:sapphire films epitaxially grown on c-cut sapphire substrates by pulsed laser deposition (PLD). Deposition conditions have been studied extensively and optimised in order to produce high-performance optical waveguides. In particular we have studied the effects of different values of oxygen pressure, background gases and substrate temperature on the resultant surface roughness, composition, crystallinity, fluorescence and waveguide losses. For instance we found that Ti:sapphire films deposited in Ar feature higher fluorescence than those grown in O2 and N2 (see Figure 1) under the same deposition conditions: laser fluence F ~ 3.3 J/cm2, laser repetition rate f = 20 Hz, substrate temperature T ~ 1050°C, gas pressure P ~ 2.10-3 mbar, target-substrate distance d = 4 cm.
Sposito, Alberto
388e78c2-03ac-42aa-9b3c-99cfb3c17813
Choudhary, Amol
a5540b54-f153-43e4-a59a-e3ed9360904b
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
2012
Sposito, Alberto
388e78c2-03ac-42aa-9b3c-99cfb3c17813
Choudhary, Amol
a5540b54-f153-43e4-a59a-e3ed9360904b
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Sposito, Alberto, Choudhary, Amol, Shepherd, D.P. and Eason, R.W.
(2012)
Low-loss Ti:sapphire waveguides fabricated by pulsed laser deposition.
International OSA Network of Students IONS-12, Naples, Italy.
04 - 07 Jul 2012.
Record type:
Conference or Workshop Item
(Paper)
Abstract
We report the fabrication and characterisation of Ti:sapphire films epitaxially grown on c-cut sapphire substrates by pulsed laser deposition (PLD). Deposition conditions have been studied extensively and optimised in order to produce high-performance optical waveguides. In particular we have studied the effects of different values of oxygen pressure, background gases and substrate temperature on the resultant surface roughness, composition, crystallinity, fluorescence and waveguide losses. For instance we found that Ti:sapphire films deposited in Ar feature higher fluorescence than those grown in O2 and N2 (see Figure 1) under the same deposition conditions: laser fluence F ~ 3.3 J/cm2, laser repetition rate f = 20 Hz, substrate temperature T ~ 1050°C, gas pressure P ~ 2.10-3 mbar, target-substrate distance d = 4 cm.
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Published date: 2012
Venue - Dates:
International OSA Network of Students IONS-12, Naples, Italy, 2012-07-04 - 2012-07-07
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 367798
URI: http://eprints.soton.ac.uk/id/eprint/367798
PURE UUID: 5d577a62-f7c3-494b-8133-9b544bec0850
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Date deposited: 15 Sep 2014 09:20
Last modified: 15 Mar 2024 02:40
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Contributors
Author:
Alberto Sposito
Author:
Amol Choudhary
Author:
D.P. Shepherd
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