Laser erasable implanted gratings for integrated silicon photonics
Laser erasable implanted gratings for integrated silicon photonics
In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated implanted Bragg gratings with lengths up to 1000µm. Results are also presented, demonstrating that the gratings can be selectively removed by UV pulsed laser annealing, enabling a new concept of laser erasable devices for integrated photonics.
10728-10734
Loiacono, Renzo
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Reed, Graham T.
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Mashanovich, Goran Z.
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Gwilliam, Russell
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Henley, Simon J.
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Hu, Youfang
38fe48b3-1609-4834-ad54-dc823e3a98b3
Feldesh, Ran
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Jones, Richard
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23 May 2011
Loiacono, Renzo
bd4e12f9-9adc-4d25-9a7b-d3a4f1da3735
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Gwilliam, Russell
05728edb-27e0-4939-8b23-5d76f33786d6
Henley, Simon J.
017d315d-ed39-4234-b109-0ec6e865128f
Hu, Youfang
38fe48b3-1609-4834-ad54-dc823e3a98b3
Feldesh, Ran
784daed3-c2bb-4444-be6c-2f182feda78b
Jones, Richard
b23db33c-778b-4560-9c06-eb8af3bc3fb6
Loiacono, Renzo, Reed, Graham T., Mashanovich, Goran Z., Gwilliam, Russell, Henley, Simon J., Hu, Youfang, Feldesh, Ran and Jones, Richard
(2011)
Laser erasable implanted gratings for integrated silicon photonics.
Optics Express, 19 (11), .
(doi:10.1364/OE.19.010728).
(PMID:21643329)
Abstract
In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated implanted Bragg gratings with lengths up to 1000µm. Results are also presented, demonstrating that the gratings can be selectively removed by UV pulsed laser annealing, enabling a new concept of laser erasable devices for integrated photonics.
Text
oe-19-11-10728
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Published date: 23 May 2011
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 337744
URI: http://eprints.soton.ac.uk/id/eprint/337744
ISSN: 1094-4087
PURE UUID: b58ee31e-e3c7-4cde-90a3-516efd5e7ad3
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Date deposited: 03 May 2012 14:20
Last modified: 14 Mar 2024 10:57
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Contributors
Author:
Renzo Loiacono
Author:
Russell Gwilliam
Author:
Simon J. Henley
Author:
Youfang Hu
Author:
Ran Feldesh
Author:
Richard Jones
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