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Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres

Rongrui He1,2, Pier J.A.Sazio3, Anna C.Peacock3, Noel Healy3, Justin R.Sparks1,2, Mahesh Krishnamurthi2,4, Venkatraman Gopalan2,4 and John V.Badding1,2

1. Department of Chemistry, Pennsylvania State University, University Park, Pennsylvania 16802, USA
2. Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA
3. Optoelectronics Research Centre, University of Southampton, UK
4. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.

Abstract

The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.


Nature Photonics (2012) Vol.6(3) pp.174-179 (Letter)

doi: 10.1038/NPHOTON.2011.352

Southampton ePrint id: 334086

 

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