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Phase change gallium and germanium chalcogenides for optical electronic and plasmonic switching

D.W.Hewak, C.C.Huang, B.Gholipour, K.Knight, S.Li, Z.L.Sámson, K.F.MacDonald and N.I.Zheludev
Optoelectronics Research Centre, University of Southampton, UK

S.C.Yen, C.D.Shiue and D.P.Tsai
Department of Physics, National Taiwan University, Taipei 10617, Taiwan, Republic of China

F.De Angelis and E.Di Fabrizio
Istituto Italiano di Tecnologia (IIT), NanoBioScience Laboratory, via Morego 30, 16163 Genova, Italy
BIONEM laboratory, University of Magna Graecia, viale Europa 88100, Germaneto-Catanzaro, Italy

S.Guerin and B.Hayden
Ilika Technologies Ltd, Kenneth Dibben House, Chilworth, Southampton, SO16 7NS, United Kingdom

Abstract

We show that the phase-change technology behind rewritable optical disks and the latest generation of electronic memories can also offer applications in active plasmonics and metamaterials. A range of chalcogenides have been fabricated and characterized for their optical, thermal and electrical properties. Experimental demonstrations show that excitation-induced refractive index changes in gallium lanthanum sulphide (Ga:La:S), a can provide high contrast switching functionality. We have fabricated a silver/GLS interface which can support surface plasmon-polaritons and also incorporated a Ga:La:S thin film with a metamaterials based on arrays of resonance cells. We demonstrate both plasmonic modulation and metamaterials switching through reversible refractive index changes in the chalcogenide.


EPCOS 2010 Milan (2010)

Southampton ePrint id: 339967

 

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Copyright University of Southampton 2006