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Characterisation of Ga-La-S chalcogenide glass thin film optical waveguides, fabricated by pulsed laser deposition
Devinder S.Gill1, Robert W.Eason1, Carlos Zaldo2, Harvey N.Rutt1, Nikolaos A.Vainos3
1. Optoelectronics Research Centre, University of Southampton, UK
2. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Campus Universitario de Cantoblanco C-IV. 28049 Madrid, Spain.
3. Foundation for Research and Technology-Hellas (FO.R.T.H.), Institute of Electronic Structure and Laser (I.E.S.L.), P.O.Box 1527, Heraklion 71 110, Crete, Greece
The fabrication of stoichiometric thin-film optical waveguides of Ga-La-S via a pulsed laser deposition technique is reported. Stoichiometric films are grown by ablating Ga-La-S bulk glass with a KrF excimer laser (λ=248 nm) at an incident laser flux >/= 3.5 J/cm2. The composition of the films is determined by energy-dispersive X-ray analysis and the refractive index is measured by a dark-mode prism coupling technique. Photoinduced structural rearrangement of the as-deposited films leads to a blueshift in the visible absorption edge and a permanent refractive index change, Δn, of -1%. On the basis of these results, grating structures have been written with both blue light, and e-beam addressing, and their suitability for integrated optical structures assessed.
Journal of Non-Crystalline Solids (1995) Vol.191(3) pp.321-326
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