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Supercritical chemical fluid deposition of high quality compound semiconductors

Mohammad Afzaala, Gabrielle Aksomaityteb, Paul O'Briena, Fei Chengb, Michael Georgee, Andrew Hectorb, Steven Howdlee, Jason Hydeb, William Levasonb, Mohamed Malika, Kanad Mallikb, Chinh Nguyena, Gillian Reidb, Pier Saziof, David Smithb, Michael Websterb, James Wilsonb, Jixin Yangb and Wenjian Zhangb

a. University of Manchester
b. University of Southampton
e. University of Nottingham
f. University of Southampton, Optoelectronics Research Centre

Abstract

The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2 or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.


216th ECS Meeting Vienna 4-9 Oct (2009)

doi: 10.1149/1.3207724

Southampton ePrint id: 145985

 

 

 

Copyright University of Southampton 2006