UV laser direct writing of ferroelectric domain inverted structures in single crystal lithium niobate
UV laser direct writing of ferroelectric domain inverted structures in single crystal lithium niobate
Ferroelectric domain engineering in lithium niobate (LN) is a subject of extensive research mainly for the fabrication of quasi-phase-matched (QPM) nonlinear optical devices but also for the improvement of linear devices and microstructuring. The most common method for ferroelectric domain engineering is by the application of an external electric field, higher than the coercive field (E Here we present UV laser induced inhibition of ferroelectric domain inversion where spatially selective preexposure of the +z face of congruent LN samples inhibits domain inversion in this area upon the application of an external electric field. In these experiments the two steps of i) UV illumination and ii) E-field application are separated; the application of the external electric field can take place long after (days-months) after the UV illumination.
University of Southampton
Mailis, S.
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Muir, A.C.
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Sones, C.L.
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Eason, R.W.
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Jungk, T.
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Hoffmann, Á.
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Soergel, E.
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2007
Mailis, S.
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Muir, A.C.
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Sones, C.L.
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Eason, R.W.
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Jungk, T.
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Hoffmann, Á.
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Soergel, E.
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Mailis, S., Muir, A.C., Sones, C.L., Eason, R.W., Jungk, T., Hoffmann, Á. and Soergel, E.
(2007)
UV laser direct writing of ferroelectric domain inverted structures in single crystal lithium niobate
(Lasers for Science Facility (LSF) Programme)
Southampton, UK.
University of Southampton
Record type:
Monograph
(Project Report)
Abstract
Ferroelectric domain engineering in lithium niobate (LN) is a subject of extensive research mainly for the fabrication of quasi-phase-matched (QPM) nonlinear optical devices but also for the improvement of linear devices and microstructuring. The most common method for ferroelectric domain engineering is by the application of an external electric field, higher than the coercive field (E Here we present UV laser induced inhibition of ferroelectric domain inversion where spatially selective preexposure of the +z face of congruent LN samples inhibits domain inversion in this area upon the application of an external electric field. In these experiments the two steps of i) UV illumination and ii) E-field application are separated; the application of the external electric field can take place long after (days-months) after the UV illumination.
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Published date: 2007
Additional Information:
CENTRAL LASER FACILITY ANNUAL REPORT | 2007/2008
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Local EPrints ID: 65819
URI: http://eprints.soton.ac.uk/id/eprint/65819
PURE UUID: d2b26709-7807-4ccb-b828-0b4786e7b795
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Date deposited: 30 Mar 2009
Last modified: 14 Mar 2024 02:33
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Author:
S. Mailis
Author:
A.C. Muir
Author:
T. Jungk
Author:
Á. Hoffmann
Author:
E. Soergel
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