The ultimate strength of silica nanowires
The ultimate strength of silica nanowires
Silica nanowires (SN) manufactured from optical fibers using a top-down approach have in the recent years attracted much attention because of their use for photonic applications and sensors. Until 2003, surface roughness and inhomogeneity appear to have limited the use of SNs for optical applications.
SN and sub-wavelength wires offer a number of unique optical and mechanical properties, including: 1) Large evanescent fields; 2) High nonlinearity; 3) Extreme flexibility and configurability; and 4) Low-loss interconnection to other optical fibers and fiberised components. In fact SN are fabricated by adiabatically stretching optical fibers and thus preserve the original dimensions of the optical fiber at their input and output allowing the manipulation of a single nanowire without the expensive instrumentation typical of the nanoscience and nanotechnology worlds.
Brambilla, G.
815d9712-62c7-47d1-8860-9451a363a6c8
October 2008
Brambilla, G.
815d9712-62c7-47d1-8860-9451a363a6c8
Brambilla, G.
(2008)
The ultimate strength of silica nanowires.
The IEEE Nanotechnology Materials and Devices Conference 2008, Kyoto, Japan.
20 - 22 Oct 2008.
Record type:
Conference or Workshop Item
(Other)
Abstract
Silica nanowires (SN) manufactured from optical fibers using a top-down approach have in the recent years attracted much attention because of their use for photonic applications and sensors. Until 2003, surface roughness and inhomogeneity appear to have limited the use of SNs for optical applications.
SN and sub-wavelength wires offer a number of unique optical and mechanical properties, including: 1) Large evanescent fields; 2) High nonlinearity; 3) Extreme flexibility and configurability; and 4) Low-loss interconnection to other optical fibers and fiberised components. In fact SN are fabricated by adiabatically stretching optical fibers and thus preserve the original dimensions of the optical fiber at their input and output allowing the manipulation of a single nanowire without the expensive instrumentation typical of the nanoscience and nanotechnology worlds.
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Published date: October 2008
Venue - Dates:
The IEEE Nanotechnology Materials and Devices Conference 2008, Kyoto, Japan, 2008-10-20 - 2008-10-22
Identifiers
Local EPrints ID: 76309
URI: http://eprints.soton.ac.uk/id/eprint/76309
PURE UUID: 6da444b4-cb76-449c-ab92-ab73baeeeec0
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Date deposited: 18 Mar 2010
Last modified: 14 Mar 2024 02:45
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