Growth of KNbO3 thin films on MgO by pulsed laser deposition
Growth of KNbO3 thin films on MgO by pulsed laser deposition
Crystalline and stoichiometric KNbO3 thin films have been grown on (100) oriented MgO substrates by pulsed laser deposition technique. Electron microprobe analysis and Rutherford backscattering spectroscopy of the films show a progressive loss of K with increasing substrate-target distance. To compensate for this K loss the ceramic KNbO3 targets were enriched with K2CO3 powder, pressed at room temperature and sintered at 650°C. For a substrate-target distance of 6 cm, targets with [K]/[Nbl molar ratio = 2.85 yield stoichiometric KNbO3 films. A partial oxygen pressure of 2 x mbar was optimum for growing transparent films. Films grown between 650 and 700°C show the KNbO3 crystalline phase with its (110) axis preferentially oriented perpendicular to the surface of the substrate. At these temperatures KNbO3 diffusion into the MgO substrate is observed. Films grown from KNbO3 single crystal targets only contain a Mg4Nb2O9 crystalline layer.
502-504
Zaldo, C.
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Gill, D.S.
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Eason, R.W.
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Mendiola, J.
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Chandler, P.J.
df497652-94c6-4987-9fe1-a4b93111dadf
1994
Zaldo, C.
fed559d7-64ba-4a7a-91d8-bb2ce13ee8e0
Gill, D.S.
0837886a-5999-478f-8b32-ea1996611c3c
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Mendiola, J.
0c3c5105-7d4c-414c-9857-78bc88310552
Chandler, P.J.
df497652-94c6-4987-9fe1-a4b93111dadf
Zaldo, C., Gill, D.S., Eason, R.W., Mendiola, J. and Chandler, P.J.
(1994)
Growth of KNbO3 thin films on MgO by pulsed laser deposition.
Applied Physics Letters, 65 (4), .
(doi:10.1063/1.112280).
Abstract
Crystalline and stoichiometric KNbO3 thin films have been grown on (100) oriented MgO substrates by pulsed laser deposition technique. Electron microprobe analysis and Rutherford backscattering spectroscopy of the films show a progressive loss of K with increasing substrate-target distance. To compensate for this K loss the ceramic KNbO3 targets were enriched with K2CO3 powder, pressed at room temperature and sintered at 650°C. For a substrate-target distance of 6 cm, targets with [K]/[Nbl molar ratio = 2.85 yield stoichiometric KNbO3 films. A partial oxygen pressure of 2 x mbar was optimum for growing transparent films. Films grown between 650 and 700°C show the KNbO3 crystalline phase with its (110) axis preferentially oriented perpendicular to the surface of the substrate. At these temperatures KNbO3 diffusion into the MgO substrate is observed. Films grown from KNbO3 single crystal targets only contain a Mg4Nb2O9 crystalline layer.
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Published date: 1994
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Local EPrints ID: 78437
URI: http://eprints.soton.ac.uk/id/eprint/78437
ISSN: 0003-6951
PURE UUID: 3be91bb0-099e-492d-a7e1-8a7c5e328ca5
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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:33
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Author:
C. Zaldo
Author:
D.S. Gill
Author:
J. Mendiola
Author:
P.J. Chandler
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