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Electrical phase change of Ga:La:S:Cu films

Electrical phase change of Ga:La:S:Cu films
Electrical phase change of Ga:La:S:Cu films
Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200 µm in the amorphous state and 40 µm in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150 ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.
Ga-La-S-Cu, amorphous state, amorphous thin films, crystallisation, electrical phase change, electrical resistivity, memory devices, optical pump probe method, sputter deposition
0013-5194
830-831
Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Mairaj, A.
c05fb028-c25d-445a-90d2-2085e8a4fe76
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Sessions, N.P.
ee737092-56b4-403e-a2f9-764e07e42625
Hassan, M.
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Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Mairaj, A.
c05fb028-c25d-445a-90d2-2085e8a4fe76
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Sessions, N.P.
ee737092-56b4-403e-a2f9-764e07e42625
Hassan, M.
3cfcf847-b6e9-438f-9576-515570671ea5
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Simpson, R.E., Mairaj, A., Curry, R.J., Huang, C.C., Knight, K., Sessions, N.P., Hassan, M. and Hewak, D.W. (2007) Electrical phase change of Ga:La:S:Cu films. Electronics Letters, 43 (15), 830-831. (doi:10.1049/el:20071290).

Record type: Article

Abstract

Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200 µm in the amorphous state and 40 µm in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150 ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.

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Published date: 19 July 2007
Keywords: Ga-La-S-Cu, amorphous state, amorphous thin films, crystallisation, electrical phase change, electrical resistivity, memory devices, optical pump probe method, sputter deposition

Identifiers

Local EPrints ID: 54044
URI: http://eprints.soton.ac.uk/id/eprint/54044
ISSN: 0013-5194
PURE UUID: da58ca27-2399-48fa-90bf-2792c7e22872
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 04 Aug 2008
Last modified: 16 Mar 2024 03:46

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Contributors

Author: R.E. Simpson
Author: A. Mairaj
Author: R.J. Curry
Author: C.C. Huang ORCID iD
Author: K. Knight
Author: N.P. Sessions
Author: M. Hassan
Author: D.W. Hewak ORCID iD

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