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Surface domain inversion in LiNbO3 by direct UV writing

Surface domain inversion in LiNbO3 by direct UV writing
Surface domain inversion in LiNbO3 by direct UV writing
Ferroelectric domain inversion has been achieved on the +z and the -z faces of congruent undoped lithium niobate (LiNbO3) single crystals by direct UV writing using a continuous wave (c.w.) frequency doubled argon ion laser (lambda = 244 nm). The width and the depth of the domains were observed to depend on the intensity and the spot size of the laser beam as well as the writing speed. The inverted domain structures were investigated by scanning electron microscopy (SEM), after HF acid differential etching, and piezoresponse force microscopy (PFM) [1]. UV laser inverted domains directly written on a multi domain crystal (PPLN) show that the PFM contrast of the UV written domains is lower as compared to the bulk domains (Fig. 1b). This indicates that the UV written domains are shallower than 1 micron because any domain depth exceeding ~ 1 micron in LiNbO3 would appear as bulk in PFM imaging. This is consistent with the extremely small absorption depth of << 1 micron at lambda = 244 nm [2].

Although shallow these UV laser written domains can be also remarkably narrow and also they can be fabricated onto any surface independent of the crystal orientation. Driving these surface domains deeper in the crystal by optical or electric field post processing is currently under investigation.
Jungk, T.
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Hoffmann, Á.
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Soergel, E.
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Mailis, S.
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Muir, A.C.
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Wellington, I.T.
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Valdivia, C.E.
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Sones, C.L.
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Eason, R.W.
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Jungk, T.
a61978ec-f204-4e78-bd3a-434b17a6739d
Hoffmann, Á.
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Soergel, E.
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Mailis, S.
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Muir, A.C.
a203d28e-5947-4743-ade9-8a2e0e6f3419
Wellington, I.T.
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Valdivia, C.E.
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Sones, C.L.
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Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020

Jungk, T., Hoffmann, Á., Soergel, E., Mailis, S., Muir, A.C., Wellington, I.T., Valdivia, C.E., Sones, C.L. and Eason, R.W. (2007) Surface domain inversion in LiNbO3 by direct UV writing. EMF-2007, 11th European Meeting on Ferroelectricity, Bled, Slovenia. 03 - 07 Sep 2007.

Record type: Conference or Workshop Item (Paper)

Abstract

Ferroelectric domain inversion has been achieved on the +z and the -z faces of congruent undoped lithium niobate (LiNbO3) single crystals by direct UV writing using a continuous wave (c.w.) frequency doubled argon ion laser (lambda = 244 nm). The width and the depth of the domains were observed to depend on the intensity and the spot size of the laser beam as well as the writing speed. The inverted domain structures were investigated by scanning electron microscopy (SEM), after HF acid differential etching, and piezoresponse force microscopy (PFM) [1]. UV laser inverted domains directly written on a multi domain crystal (PPLN) show that the PFM contrast of the UV written domains is lower as compared to the bulk domains (Fig. 1b). This indicates that the UV written domains are shallower than 1 micron because any domain depth exceeding ~ 1 micron in LiNbO3 would appear as bulk in PFM imaging. This is consistent with the extremely small absorption depth of << 1 micron at lambda = 244 nm [2].

Although shallow these UV laser written domains can be also remarkably narrow and also they can be fabricated onto any surface independent of the crystal orientation. Driving these surface domains deeper in the crystal by optical or electric field post processing is currently under investigation.

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Published date: 2007
Venue - Dates: EMF-2007, 11th European Meeting on Ferroelectricity, Bled, Slovenia, 2007-09-03 - 2007-09-07

Identifiers

Local EPrints ID: 50186
URI: http://eprints.soton.ac.uk/id/eprint/50186
PURE UUID: 6cc8c212-2c10-4fd8-ae60-1decead27238
ORCID for S. Mailis: ORCID iD orcid.org/0000-0001-8100-2670
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

Catalogue record

Date deposited: 01 Feb 2008
Last modified: 16 Mar 2024 02:38

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Contributors

Author: T. Jungk
Author: Á. Hoffmann
Author: E. Soergel
Author: S. Mailis ORCID iD
Author: A.C. Muir
Author: I.T. Wellington
Author: C.E. Valdivia
Author: C.L. Sones
Author: R.W. Eason ORCID iD

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