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Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

C.E.Finlayson, A.Amezcua-Correa, and P.J.A.Sazio
Optoelectronics Research Centre, University of Southampton, UK

N.F.Baril and J.V.Badding
Department of Chemistry, Pennsylvania State University, University Park, Pennsylvania 16802 and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802

Abstract

Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.


Applied Physics Letters (2007) Vol.90(13) pp.132110

doi: 10.1063/1.2713755

Southampton ePrint id: 46894

 

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Copyright University of Southampton 2006