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Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx
C.J.Oton and W.H.Loh
Optoelectronics Research Centre, University of Southampton, UK
Department of Electronic and Electrical Engineering, University College London, WC1E 7JE London, UK
Despite the observation by a number of groups of a strong luminescence sensitization effect of erbium ions by excitation exchange from silicon nanoclusters, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low for much of the material reported. In this work, we examine the evidence and point out that Er excited state absorption is the likely cause.
Applied Physics Letters (2006) Vol.89 pp.031116
Copyright University of Southampton 2006