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Quasi-three-level 1.03Ám laser operation of a planar ion implanted Yb:YAG waveguide

D.C.Hanna, J.K.Jones, A.C.Large, D.P.Shepherd, A.C.Tropper
Department of Physics and Optoelectronics Research Centre, University of Southampton, UK

P.J.Chandler, M.J.Rodman, P.D.Townsend and L.Zhang
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNl 9QH. UK

Abstract

The first laser operation of an Yb:YAG waveguide is reported. Room temperature, continuous wave operation was achieved at a threshold of 30 mW. Projected thresholds of a few milliwatts for a channel waveguide indicate that for quasi-three level lasers. a waveguide configuration, even if lossy, can be highly beneficial.


Optics Communications (1993) Vol.99(34) pp.211-215

doi: 10.1016/0030-4018(93)90081-F

Southampton ePrint id: 78482

 

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Copyright University of Southampton 2006