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A low threshold quasi-three-level 946nm Nd:YAG epitaxial waveguide laser

D.C.Hanna, A.C.Large, D.P.Shepherd, and A.C.Tropper
Department of Physics and Optoelectronics Research Centre, University of Southampton, UK

I.Chartier, B.Ferrand, and D.Pelenc
Laboratoire d'Electronique, de Technologie et d'Instrumentation, (Commissariat l'Energie Atomique - Technologies Avancees) Departement Optronique - Centre d'Etudes Nucleaires de Grenoble 85X - 38041 Grenoble Cedex, France

Abstract

We report the 946nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4mW and 1.2mW respectively are lower than those reported for bulk lasers when using a similar experimental set up. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.


Advanced Solid State Lasers (ASSL 93) New Orleans Louisiana Feb (1993)

Southampton ePrint id: 77316

 

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Copyright University of Southampton 2006