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Diffusion of neodymium into sputtered films of tantalum pentoxide

David A.Sager, Vasilis Apostolopoulos and James S.Wilkinson


In this communication the diffusion of neodymium into RF-sputtered films of tantalum pentoxide has been investigated using the SIMS technique. The diffusion characteristics were obtained for a temperature of 1100C, and the results showed a time dependent diffusion coefficient that reflects a transition of the sputtered films from the amorphous to the crystalline phase. The potential for doping films of Ta2O5 with Neodymium by diffusion, for the realization of novel active optical devices, is also discussed.

Journal of the American Ceramic Society (2002) Vol.85(10) pp.2581-2583

doi: 10.1111/j.1151-2916.2002.tb00501.x

Southampton ePrint id: 57583


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