Diffusion of neodymium into sputtered films of tantalum pentoxide

Abstract

In this communication the diffusion of neodymium into RF-sputtered films of tantalum pentoxide has been investigated using the SIMS technique. The diffusion characteristics were obtained for a temperature of 1100°C, and the results showed a time dependent diffusion coefficient that reflects a transition of the sputtered films from the amorphous to the crystalline phase. The potential for doping films of Ta₂O₅ with Neodymium by diffusion, for the realization of novel active optical devices, is also discussed.

Journal of the American Ceramic Society (2002) Vol.85(10) pp.2581-2583

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