Beam deflection and T.I.R. switching in domain-engineered LiNbO3
Beam deflection and T.I.R. switching in domain-engineered LiNbO3
We have developed a novel electro-optically addressable deflector and switch in a sample of LiNbO3. Patterning and electric-field poling produce areas of oppositely oriented domain regions separated by a sharp boundary. An external electric field applied to this boundary produces equal magnitude refractive index changes, Δn, of opposite sign between adjacent domain regions. For increasing Δn, the incident beam experiences deflection, until a critical value is reached when TIR will occur, thereby leading to complete switching of beam direction.
Such a device provides numerous advantages including ease of fabrication, high contrast ratios (TIR is 100% efficient), relatively low drive voltages, large deflections (~8° for an applied field of 1000V), and a wavelength dependence that is superior to other electro-optic devices such as Pockels cells.
We will discuss results achieved for light of s and p polarisations, for wavelengths In the visible and the near I.R., with initial contrast ratios >20dB.
Boyland, A.J.
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Mailis, S.
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Hendricks, J.M.
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Smith, P.G.R.
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Eason, R.W.
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Boyland, A.J.
e6e842e6-0fe6-4de2-a9b8-ca44f30ab4d5
Mailis, S.
233e0768-3f8d-430e-8fdf-92e6f4f6a0c4
Hendricks, J.M.
0dc8ec2a-4a6e-415a-bb7d-417917f4f130
Smith, P.G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Boyland, A.J., Mailis, S., Hendricks, J.M., Smith, P.G.R. and Eason, R.W.
(2001)
Beam deflection and T.I.R. switching in domain-engineered LiNbO3.
IoP Meeting - Optics and nonlinear optics of microstructured and nanostructured materials, London, United Kingdom.
14 Nov 2001.
Record type:
Conference or Workshop Item
(Paper)
Abstract
We have developed a novel electro-optically addressable deflector and switch in a sample of LiNbO3. Patterning and electric-field poling produce areas of oppositely oriented domain regions separated by a sharp boundary. An external electric field applied to this boundary produces equal magnitude refractive index changes, Δn, of opposite sign between adjacent domain regions. For increasing Δn, the incident beam experiences deflection, until a critical value is reached when TIR will occur, thereby leading to complete switching of beam direction.
Such a device provides numerous advantages including ease of fabrication, high contrast ratios (TIR is 100% efficient), relatively low drive voltages, large deflections (~8° for an applied field of 1000V), and a wavelength dependence that is superior to other electro-optic devices such as Pockels cells.
We will discuss results achieved for light of s and p polarisations, for wavelengths In the visible and the near I.R., with initial contrast ratios >20dB.
More information
e-pub ahead of print date: 2001
Venue - Dates:
IoP Meeting - Optics and nonlinear optics of microstructured and nanostructured materials, London, United Kingdom, 2001-11-14 - 2001-11-14
Identifiers
Local EPrints ID: 17126
URI: http://eprints.soton.ac.uk/id/eprint/17126
PURE UUID: a3a32126-b62d-4e71-964e-3793d4830586
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Date deposited: 15 Sep 2005
Last modified: 16 Mar 2024 02:49
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Contributors
Author:
A.J. Boyland
Author:
S. Mailis
Author:
J.M. Hendricks
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