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Asymmetric quantum well far infrared lasers

Asymmetric quantum well far infrared lasers
Asymmetric quantum well far infrared lasers
In recent years, because of the availability of high quality quantum well (QW) wafers grown by MBE (molecular beam epitaxy) and MOCVD (metallic organic chemical vapour deposition) techniques, QW lasers have developed rapidly. This has led to the rapid development of mid infrared MQW lasers, in particular the cascade lasers and optically pumped "quantum fountain" lasers, but the techniques have not yet been extended to the far infrared (FIR).
Xin, Z.J.
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Rutt, H.N.
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Xin, Z.J.
bc46917f-364a-498b-ad97-4241cabdeee4
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc

Xin, Z.J. and Rutt, H.N. (1999) Asymmetric quantum well far infrared lasers. 24th International Conference on Infrared and Millimeter Waves, Monterey County, United States. 05 - 10 Sep 1999.

Record type: Conference or Workshop Item (Paper)

Abstract

In recent years, because of the availability of high quality quantum well (QW) wafers grown by MBE (molecular beam epitaxy) and MOCVD (metallic organic chemical vapour deposition) techniques, QW lasers have developed rapidly. This has led to the rapid development of mid infrared MQW lasers, in particular the cascade lasers and optically pumped "quantum fountain" lasers, but the techniques have not yet been extended to the far infrared (FIR).

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Published date: 1999
Venue - Dates: 24th International Conference on Infrared and Millimeter Waves, Monterey County, United States, 1999-09-05 - 1999-09-10
Learn more about Optoelectronics Research Centre research Learn more about Electronics & Computer Science research

Identifiers

Local EPrints ID: 76512
URI: http://eprints.soton.ac.uk/id/eprint/76512
PURE UUID: d644acb6-f6c3-4f7d-999a-94a0d07146bf

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Date deposited: 11 Mar 2010
Last modified: 13 Mar 2024 23:17

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Contributors

Author: Z.J. Xin
Author: H.N. Rutt

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