Epitaxial growth of high quality ZnS films on sapphire and silicon by pulsed laser deposition

Abstract

We report for the first time, epitaxial growth of high-quality ZnS films on sapphire and silicon substrates, using pulsed laser deposition. X-ray diffraction results show that at all growth temperatures from 200 °C to 680 °C, epitaxial wurtzite (002) ZnS films have been successfully grown on (1012) sapphire and (001) silicon substrates. X-ray diffraction data yield full width at half maximum 2θ values of 0.13° for as-grown samples, compared with 28 values or 0.09° and 0.08° for the bare sapphire and silicon substrates respectively.

Semiconductor Science and Technology (1999) Vol.14 pp.695-698

Publisher′s URL: http://www.iop.org/EJ/article/0268-1242/14/8/305/s90805.pdf?request-id=96a1628d-ff1f-4718-84e9-080c526e1aac

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