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Ti-diffusion in sapphire for active and passive waveguide devices

L.M.B.Hickey, G.R.Quigley, J.S.Wilkinson
Optoelectronics Research Centre, University of Southampton, UK

E.G.Moya, F.Moya
Laboratoire Structures et Reactivite des Systemes Metal-Ceramique Faculte des Sciences St. Jerome, 13397-Marseille-Cedex 20-France

Laboratoire de Physique des Solides, Place Aristide Briand, 92 195-Meudon-Cedex, France


Following the recent realisation of a Ti:sapphire waveguide laser by Ti-indiffusion, the relation between diffusion conditions, waveguide properties and Ti spectroscopy is discussed in depth with a view to developing a next-generation device.

CLEO/Europe '98 Glasgow Scotland 13-18 Sep (1998)

Southampton ePrint id: 76668


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Copyright University of Southampton 2006