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Performance of a low loss pulsed laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06Ám and 0.94Ám

C.L.Bonner, A.A.Anderson, R.W.Eason and D.P.Shepherd
Optoelectronics Research Centre and Department of Physics
University of Southampton, UK

D.S.Gill, C.Grivas and N.Vainos
Foundation for Research and Technology - Hellas
Institute of Electronic Structure and Laser, Laser and Applications Division
P.O.Box 1527, Heraklion, 711 10 Crete, Greece


We report the laser performance of a low propagation loss neodymium doped Gd3Ga5O12 (Nd:GGG) waveguide fabricated by pulsed laser deposition. An 8μm thick crystalline Nd:GGG film grown on an undoped Y3Al5O12 (YAG) substrate lases at 1.060μm and 1.062μm, when pumped by a Ti:sapphire laser operating at 740nm or 808nm. Using a 2.2% output coupler a 1060nm laser threshold of 4mW and a slope efficiency of 20% were observed. Laser action has also been achieved, we believe for the first time in Nd:GGG, on the quasi-three level 937nm transition. With a 2% output coupler at this wavelength a laser threshold of 17mW and a 20% slope efficiency were obtained. This demonstration of low propagation loss combined with the fact that these waveguides have a very high numerical aperture, make pulsed laser deposited thin films attractive for high power diode pumped devices.

Optics Letters (1997) Vol.22(13) pp.988-990

doi: 10.1364/OL.22.000988

Southampton ePrint id: 78003


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Copyright University of Southampton 2006