|Publication No: 1242||Search all ORC publications|
Growth of Ti:sapphire single crystal thin films by pulsed laser deposition
Andrew A.Andersona, Robert W.Easona, Miroslav Jelínekb, Christos Grivasc David Laned, Keith Rogersd, L.M.B.Hickeya and Costas Fotakisc.
a) Dept. of Physics and Optoelectronics Research Centre, University of Southampton, UK.
b) Institute of Physics, Na Slovance 2, 18040 Prague 8, Czech Republic.
c) F0.R.T.H - I.E.S.L, Vasilika Vouton, PO Box 1527, Heraklion 71 110, Crete, Greece.
d) Cranfield University, RMCS Shrivenham, Swindon SN6 8lA, UK.
This paper documents the growth of single crystal Ti:sapphire thin films, typically 10μm thick, on undoped sapphire substrates using Pulsed Laser Deposition from a Ti:sapphire single crystal target with a doping level of 0.1 % wt Ti2O3. These thin films are shown to have very high crystal quality using Ion Beam Channelling and X-Ray Diffraction Techniques. The degree of titanium incorporation into the films is investigated using Inductively Coupled Plasma Mass Spectrometry and Particle Induced X-ray Emission. These techniques show that levels of up to 0.08% wt Ti2O3 are present in the deposited layers.
Thin Solid Films (1997) Vol.300 pp.68-71
Copyright University of Southampton 2006